Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD
Keywords: 81.15.G; 71.55.E; 61.72.M; 81.65.C; 81.05.E; A1. Crystal structure; A1. Defects; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III-V materials; B3. High electron mobility transistors;