Growth and characterization of thick GaN layers grown by halide vapour phase epitaxy on lattice-matched AlInN templates
Keywords: 81.05.Ea; 81.10.Bk; 81.15.Cd; 68.35.Ct; 78.55.âm; 78.60.Hk; A1. Crystal morphology; A1. Interfaces; A1. Roughening; A2. Growth from vapour; A3. Hydride vapour phase epitaxy; B2. Semiconducting III-V materials;