
Investigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots emitting at 1.5 μm using aberration-corrected scanning transmission electron microscopy
Keywords: A1. Characterisation; A1. Nanostructures; A1. Scanning transmission electron microscopy; A3. Metalorganic vapour-phase epitaxy; A3. Quantum dots; B2. Semiconducting III/V materials