
Combined EELS, LEED and SR-XPS study of ultra-thin crystalline layers of indium nitride on InP(1 0 0)-Effect of annealing at 450 °C
Keywords: 79.60.Dp; 81.65.Lp; 81.05.Ea; 79.20.Uv; 79.60.âI; 61.14.Hg; Nitridation; III-V semiconductors; Thin films; EELS; Synchrotron radiation; SR-XPS; LEED;