Dependence of Al incorporation on growth temperature during laser molecular beam epitaxy of AlxGa1âxN epitaxial layers on sapphire (0001)
Keywords: گروه سوم نیترید; Group III-Nitrides; Hetero-epitaxy; Atomic force microscopy; High resolution X-ray diffraction; X-ray photoelectron spectroscopy; Photoluminescence spectroscopy;