In situ studies of semiconductor growth by synchrotron X-ray diffraction
Keywords: رسیدن اوستوالد; 68.47.Fg; 68.43.Jk; 81.15.Hi; 81.05.Ea; 61.10.Nz; Molecular beam epitaxy; Surface X-ray diffraction; Surface kinetics; Recovery; Coarsening; Ostwald ripening; Island size distribution;