
1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz
Keywords: 72.80.Ey; 81.05.Ea; 81.15.Gh; 85.30.TvAlGaN/GaN; HEMT; MOCVD; Power device; SiC substrates