کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10128407 | 1645135 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photoluminescence in pulsed-laser deposited GeGaSbS:Er films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Photoluminescence in pulsed-laser deposited GeGaSbS:Er films Photoluminescence in pulsed-laser deposited GeGaSbS:Er films](/preview/png/10128407.png)
چکیده انگلیسی
The complex dielectric function, the Er3+ Stokes emission at â1540â¯nm and the upconversion photoluminescence at â990â¯nm of pulsed-laser deposited thin-film GeGaSbS:Er3+ are studied. The linear-refractive-index dispersion is obtained by fitting spectroscopic ellipsometry data to the Sellmeier and the Cody-Lorentz parametrizations. The former model is used to calculate nonlinear refractive index. The Stokes emission intensity at â1540â¯nm, originating from the Er3+: 4I13/2â¯ââ¯4I15/2 transition under a 980â¯nm pumping, diminishes with increasing refractive index and decreasing optical-bandgap energy of the films. An attempt to relate differences in the optical and photoluminescence properties to the atomic structure elucidated from Raman spectra analysis is presented. The emission probability is highest for the structure with the lowest fraction of (semi)metallic bonds, the highest content of homonuclear S-S bonds and the lowest Ge/S ratio. In such a film, the clustering of Er3+ ions, which is responsible for the intensity weakening, is suppressed. The film shows â990â¯nm upconversion photoluminescence originating from the Er3+: 4I11/2â¯ââ¯4I15/2 transition under a 1550â¯nm excitation. The upconversion peak shape resembles that of the compositionally and structurally similar bulk glass.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 85, November 2018, Pages 246-253
Journal: Optical Materials - Volume 85, November 2018, Pages 246-253
نویسندگان
Lukas Strizik, Spyros N. Yannopoulos, Vasiliki Benekou, Jiri Oswald, Martin Pavlista, Vit Prokop, Tomas Wagner, Jiri Orava,