کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10128827 | 1645147 | 2018 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Comparison of linear transformations for deriving kinetic constants during silicon etching in Cl2 environment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Comparison of linear transformations for deriving kinetic constants during silicon etching in Cl2 environment Comparison of linear transformations for deriving kinetic constants during silicon etching in Cl2 environment](/preview/png/10128827.png)
چکیده انگلیسی
The chemical etching of n-type polycrystalline silicon films in Cl2 environment at three different temperatures is investigated. The experimental dependences of silicon etching rate on pressure of Cl2 molecules are described using the Michaelis-Menten equation. The experimental data are presented using Lineweaver-Burk, Hanes-Woolf, and Eadie-Hofstee plots. The linear transformations are used to derive reaction rate constants, desorption rate constants, and Michaelis constants. True values of the kinetic constants are determined using Michaelis-Menten saturation curves. The linear transformations are compared using mean absolute percentage errors (MAPEs) of the kinetic constants. It is found that the Hanes-Woolf plot provides the most accurate values of the kinetic constants.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 157, November 2018, Pages 391-394
Journal: Vacuum - Volume 157, November 2018, Pages 391-394
نویسندگان
R. KnizikeviÄius,