کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10134343 | 1645608 | 2018 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Theoretical study of structural, electronic and optical properties of InxGa1-xN alloys
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Theoretical study of structural, electronic and optical properties of InxGa1-xN alloys Theoretical study of structural, electronic and optical properties of InxGa1-xN alloys](/preview/png/10134343.png)
چکیده انگلیسی
In this work, structural, electronic and optical properties of InxGa1-xN are calculated by using full potential linearized augmented plane wave method. The calculated lattice parameters are found to be increased with the increase in In concentration and slightly deviating from the Vegard's law. Band gaps are calculated by generalized gradient approximation (GGA) and modified Beck-Johnson (mBJ) GGA. The calculated band gaps are found to be decreased with the increase in In Concentration. The mBJ-GGA band gaps are very close to experimental values. Optical characteristics such as refractive index and dielectric constants are also calculated. The calculated parameters suggested that the materials are suitable for optoelectronics applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - Volume 174, December 2018, Pages 739-747
Journal: Optik - Volume 174, December 2018, Pages 739-747
نویسندگان
M. Shakil, M. Kashif Masood, M. Zafar, Shabir Ahmad, Abrar Hussain, M.A. Gadhi, S.A. Buzdar, T. Iqbal,