کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10135567 | 1645670 | 2018 | 20 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhanced PbS quantum dot loading on TiO2 photoanode using atomic-layer-deposited ZnS interfacial layer for quantum dot-sensitized solar cells
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ultrathin and conformal ZnS film grown by atomic layer deposition was employed in quantum dot-sensitized solar cells (QDSSCs) as an interfacial layer (IL) between mesoporous TiO2 photoanode and successive ionic layer adsorption and reaction (SILAR)-grown PbS QDs. ZnS IL provided more nucleation sites compared to a bare TiO2 photoanode, which enhanced PbS QDs loading remarkably. As a result, the optical absorbance and thus photocurrent density considerably increased. The power conversion efficiency of QDSSCs increased from 3.4% to 4% by introducing the ZnS IL. However, the β-recombination model obtained from electrochemical impedance spectroscopy revealed the evolution of charge carrier recombination inside QDs as a consequence of enhanced QD loading, which partly dilutes this benefit.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 220, 1 December 2018, Pages 293-298
Journal: Materials Chemistry and Physics - Volume 220, 1 December 2018, Pages 293-298
نویسندگان
Muhammad Abdul Basit, Muhammad Awais Abbas, Eun Sun Jung, Ijaz Ali, Dae Woong Kim, Jin Ho Bang, Tae Joo Park,