کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10245100 | 47713 | 2005 | 15 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The chemical and electronic properties of oxygen-modified C/Mo(110): a model system for molybdenum oxycarbides
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
کاتالیزور
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The chemical and electronic properties of oxygen-modified C/Mo(110): a model system for molybdenum oxycarbides The chemical and electronic properties of oxygen-modified C/Mo(110): a model system for molybdenum oxycarbides](/preview/png/10245100.png)
چکیده انگلیسی
We have utilized oxygen-modified C/Mo(110) surfaces as model systems to determine the modification effect of oxygen in “oxycarbides.” Using cyclohexene, ethylene, and methanol as probe molecules, we observed that the reactivity of the O/C/Mo(110) surfaces depended strongly on the temperature at which oxygen was introduced onto the C/Mo(110) surface. The reaction pathways were determined using both temperature-programmed desorption (TPD) and high-resolution electron energy loss spectroscopy (HREELS). For example, the O/C/Mo(110) surface obtained by exposing the carbide surface to oxygen at 600 K became chemically inert toward all three molecules. On the other hand, the 900 K O/C/Mo(110) surface was active toward all three molecules, and for the most part retained the Pt-like reaction pathways observed on unmodified C/Mo(110). Furthermore, we have also compared the electronic properties of the O/C/Mo(110) surfaces using two synchrotron spectroscopies, soft X-ray photoelectron spectroscopy (SXPS) and near-edge X-ray absorption fine structure (NEXAFS); the results revealed similar electronic properties between the 900 K O/C/Mo(110) and unmodified C/Mo(110) surfaces.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Catalysis - Volume 229, Issue 1, 1 January 2005, Pages 30-44
Journal: Journal of Catalysis - Volume 229, Issue 1, 1 January 2005, Pages 30-44
نویسندگان
Henry H. Hwu, Michael B. Zellner, Jingguang G. Chen,