کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10267318 | 459450 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrochemical etching of silicon through anodic porous alumina
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
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چکیده انگلیسی
Porous silicon with a self-ordered pore configuration having a 100Â nm periodicity was fabricated by electrochemical etching of a Si substrate through a nanochannel array of anodic porous alumina. The self-ordered anodic porous alumina used as a mask was directly prepared by anodizing an aluminum film sputtered on a Si substrate. The transfer of the self-ordered nanoporous pattern of anodic alumina onto the Si substrate could be achieved by selective electrochemical etching of exposed silicon, which was located in the pore base of the upper anodic porous alumina. The periodicity of the pore array in Si could be controlled easily by changing the channel interval of anodic porous alumina used as a mask.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochemistry Communications - Volume 7, Issue 9, September 2005, Pages 953-956
Journal: Electrochemistry Communications - Volume 7, Issue 9, September 2005, Pages 953-956
نویسندگان
Hidetaka Asoh, Kunimitsu Sasaki, Sachiko Ono,