کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364676 | 871773 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electromigration behavior in Cu/Ni-P/Sn-Cu based joint system with low current density
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Although electromigration in solder joints has great influence on reliability, few study has been reported on the Cu/Ni-P/Sn-Cu based joint system electromigration with realistic current density range lower than 10Â kA/cm2. We investigated a Cu/Ni-P/Sn-0.7Cu/Ni-P/Cu joint with current densities of 5.0 and 7.5Â kA/cm2 at 423Â K. Solder joint breakdown at the cathode side was detected for both stress conditions. Ni-P plating disappeared completely at the cathode side and a Cu-Sn intermetallic compound (IMC) formed at the interface. Cu-P IMC formed on the solder breakdown interface. Ni diffusion in Ni-P plating at the cathode was accelerated and the P-rich layer grew thicker than at the anode side before breaking down under electromigration stress. The P-rich layer reached the Cu electrode resulting in cracking along the interface between solder layer and Cu. Sn was diffused from the Ni3SnP IMC to the P-rich layer cracks and formed Cu3Sn IMC with the Cu electrode. Thus, the electromigration mechanism in an electroless Ni-P plating/Sn-Cu based joint system with low current density was clarified.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 55, Issue 12, Part A, December 2015, Pages 2554-2559
Journal: Microelectronics Reliability - Volume 55, Issue 12, Part A, December 2015, Pages 2554-2559
نویسندگان
Takuya Kadoguchi, Keisuke Gotou, Kimihiro Yamanaka, Shijo Nagao, Katsuaki Suganuma,