کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10364755 871793 2013 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Degradation of thermal interface materials for high-temperature power electronics applications
ترجمه فارسی عنوان
تجزیه مواد واسطه حرارتی برای کاربردهای الکترونیک قدرت با درجه حرارت بالا
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
چکیده انگلیسی
The specific thermal resistance values of several thermal interface materials (TIMs) intended to thermally enhance Cu contact pairs and their degradation under isothermal ageing at 170 °C have been investigated using Cu stack samples consisting of 10 Cu discs and 9 layers of the TIMs. The results obtained indicate that the specific thermal resistance values of the as-prepared Cu stack samples, one with conductive Ag thermal grease, one with Sn-3.5Ag solder joints and one with 25 μm thick Sn foil as TIMs are significantly lower than those of the Cu stack sample without any TIM. However, after the isothermal ageing at 170 °C for 90 days, the specific thermal resistance values of the samples with these TIMs are not substantially different from those of the sample without any TIM. Also reported in this paper is an estimation of testing errors for the specific thermal resistance values, microstructure characterization of the aged samples and effect of the degradation of these TIMs on the thermal performance of a high-temperature half bridge power switch module.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 53, Issue 12, December 2013, Pages 1933-1942
نویسندگان
, , , , , ,