کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10364959 | 871892 | 2005 | 26 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Using the maximum energy of injected electrons at the anode interface as breakdown variable, we have resolved the polarity gap of time- and charge-to-breakdown (TBD and QBD), confirming that the fluency and the electron energy at anode interface are the fundamental quantities controlling oxide breakdown. Combining this large database with a recently proposed cell-based analytical version of the percolation model, we extract the defect generation efficiency responsible for breakdown. Following a review of different breakdown mechanisms and models, we discuss how the release of hydrogen through the coupling between vibrational and electronic degrees of freedom can explain the power-law dependence of defect generation efficiency. On the basis of these results, a unified and global picture of oxide breakdown is constructed and the resulting model is applied to project reliability limits. In this regard, it is concluded that SiO2-based dielectrics can provide reliable gate dielectric, even to a thickness of 1Â nm, and that CMOS scaling may well be viable for the 50Â nm technology node.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issue 12, December 2005, Pages 1809-1834
Journal: Microelectronics Reliability - Volume 45, Issue 12, December 2005, Pages 1809-1834
نویسندگان
Ernest Y. Wu, Jordi Suñé,