کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10365334 872037 2005 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors
چکیده انگلیسی
Experimental investigation of the substrate current Isub as a function of the gate voltage has been performed in n-channel polycrystalline silicon thin-film transistors (polysilicon TFTs), considering the drain voltage as a parameter of the study. At low gate voltages, Isub exhibits a peak located close to the threshold voltage of the transistor due to hot-carriers generated by impact ionization. At higher gate voltages, Isub increases monotonically with increasing the gate voltage, which is attributed to the temperature rise owing to self-heating. The degradation behavior of polysilicon TFTs, stressed under two different gate and drain bias conditions that cause the same substrate current due to hot-carrier and self-heating effects, is investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issue 2, February 2005, Pages 341-348
نویسندگان
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