کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10365334 | 872037 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
Experimental investigation of the substrate current Isub as a function of the gate voltage has been performed in n-channel polycrystalline silicon thin-film transistors (polysilicon TFTs), considering the drain voltage as a parameter of the study. At low gate voltages, Isub exhibits a peak located close to the threshold voltage of the transistor due to hot-carriers generated by impact ionization. At higher gate voltages, Isub increases monotonically with increasing the gate voltage, which is attributed to the temperature rise owing to self-heating. The degradation behavior of polysilicon TFTs, stressed under two different gate and drain bias conditions that cause the same substrate current due to hot-carrier and self-heating effects, is investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issue 2, February 2005, Pages 341-348
Journal: Microelectronics Reliability - Volume 45, Issue 2, February 2005, Pages 341-348
نویسندگان
N.A. Hastas, N. Archontas, C.A. Dimitriadis, G. Kamarinos, T. Nikolaidis, N. Georgoulas, A. Thanailakis,