کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10365350 872042 2005 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits
چکیده انگلیسی
The effect of inhomogeneous negative bias temperature stress (NBTS) applied to p-MOS transistors under analog and RF CMOS operating conditions is investigated. Experimental data of a 0.18 and 0.25 μm standard CMOS process are presented and an analytical model is derived to physically explain the effect of stress on the device characteristics. The impact of inhomogeneous NBTS on device lifetime is considered and compared to the homogeneous case.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issue 1, January 2005, Pages 39-46
نویسندگان
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