کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10365355 | 872042 | 2005 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A thorough investigation of MOSFETs NBTI degradation
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
An overview of evolution of transistor parameters under negative bias temperature instability stress conditions commonly observed in p-MOSFETs in recent technologies is presented. The physical mechanisms of the degradation as well as the different defects involved have been discussed according to a systematic set of experiments with different stress conditions. According to our findings, a physical model is proposed which could be used to more accurately predict the transistor degradation. Finally, the influence of different process splits as the gate oxide nitridation, the nitrogen content, the source/drain implant and poly doping level on the NBTI degradation is investigated and discussed with our present understanding.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issue 1, January 2005, Pages 83-98
Journal: Microelectronics Reliability - Volume 45, Issue 1, January 2005, Pages 83-98
نویسندگان
V. Huard, M. Denais, F. Perrier, N. Revil, C. Parthasarathy, A. Bravaix, E. Vincent,