کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10365691 | 872161 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improving the power cycling performance of the emitter contact of IGBT modules: Implementation and evaluation of stitch bond layouts
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Improving the power cycling performance of the emitter contact of IGBT modules: Implementation and evaluation of stitch bond layouts Improving the power cycling performance of the emitter contact of IGBT modules: Implementation and evaluation of stitch bond layouts](/preview/png/10365691.png)
چکیده انگلیسی
The emitter (front metallization) of IGBTs is contacted by wire bonding. In this study, the influence of the wirebond layout on the power cycling performance of IGBT modules is investigated. Stitch bonding is implemented to modify the wirebond layout of the emitter contact. The different layouts are subjected to power cycling tests. For a better understanding of the experimental results, electrical and thermo-mechanical FEM simulations are run and the current distribution and induced mechanical stress is discussed. Based on the results of this study, the emitter contact of the new HiPak module platform is designed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 54, Issue 12, December 2014, Pages 2796-2800
Journal: Microelectronics Reliability - Volume 54, Issue 12, December 2014, Pages 2796-2800
نویسندگان
Emre Ãzkol, Samuel Hartmann, Gontran Pâques,