کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10409443 | 894026 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Broadband MEMS shunt switches using PZT/HfO2 multi-layered high k dielectrics for high switching isolation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Broadband MEMS shunt switches using PZT/HfO2 multi-layered high k dielectrics for high switching isolation Broadband MEMS shunt switches using PZT/HfO2 multi-layered high k dielectrics for high switching isolation](/preview/png/10409443.png)
چکیده انگلیسی
A novel approach using a PZT/HfO2 multi-layered dielectric for capacitive type MEMS switches was investigated. Compared to Si3N4, PZT/HfO2 demonstrated a high equivalent dielectric constant of 79-82 and a low leakage current density of 1.58Â ÃÂ 10â6Â A/cm2 after a bias stressing time of 104Â s, that result in high switching isolation and very low power consumption. In addition, a finite element analysis was used to estimate actuation voltage, insertion loss and isolation performance of one-bridge and Ï-match switches. After manufacturing, the experimental results of the Ï-match switch showed an acceptable insertion loss of less than â0.5Â dB in a frequency band of 50Â MHz-20Â GHz and significantly high isolation of â30 to â65Â dB in a broad frequency band of 50Â MHz-57Â GHz.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 121, Issue 1, 31 May 2005, Pages 275-281
Journal: Sensors and Actuators A: Physical - Volume 121, Issue 1, 31 May 2005, Pages 275-281
نویسندگان
Jiunnjye Tsaur, Kazumasa Onodera, Takeshi Kobayashi, Zhang-Jie Wang, Sven Heisig, Ryutaro Maeda, Tadatomo Suga,