Enhanced hydrogen-sensing characteristics of MISiC Schottky-diode hydrogen sensor by trichloroethylene oxidation

A novel metal-insulator-SiC (MISiC) Schottky-diode hydrogen sensor with the interfacial insulator layer grown in oxygen and trichloroethylene (TCE) is fabricated. The sensitivity and response speed of the device are investigated at different temperatures and hydrogen concentrations. The sensor can quickly respond to hydrogen variation and can give significant response even at a low hydrogen concentration of 48 ppm e.g., a sensitivity of 82% is achieved at 150 °C and 1 V. As compared to another sensor with the insulator grown in NO gas and the control without the insulator, the proposed sensor displays higher sensitivity and faster response. These improvements can be related to the effects of TCE on the quality and growth rate of the insulator layer.