کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10419567 | 904221 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of support method and mechanical property of 300Â mm silicon wafer on sori measurement
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی صنعتی و تولید
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper describes the effects of support methods and mechanical properties of 300Â mm silicon wafer on sori measurement. A new supporting method, named three-point-support method, used in the sori measurement of a large diameter silicon wafer was proposed in this study to obtain a more stable measuring process. The wafer was supported horizontally by three steel balls on the vertexes of a regular triangle at the wafer edge. The measuring repeatability and anti-disturbance ability were compared between the proposed method and the conventional one-point-support method, in which the wafer is supported with a small-area chuck at the wafer center. The effects of friction between the supports and wafer surface for the three-point-support were also estimated. Finally, the influences of different mechanical characteristics at the front and back surfaces and the crystal orientation on sori measurement were investigated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Precision Engineering - Volume 29, Issue 1, January 2005, Pages 19-26
Journal: Precision Engineering - Volume 29, Issue 1, January 2005, Pages 19-26
نویسندگان
Wataru Natsu, Yukihiro Ito, Masanori Kunieda, Kaoru Naoi, Nobuaki Iguchi,