کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10428436 909209 2016 16 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Realization of monochromatic filter using silicon grating structure: An application of silicon photonics
ترجمه فارسی عنوان
پیاده سازی فیلتر تک رنگ با استفاده از ساختار گریت سیلیکون: استفاده از فوتونیک سیلیکون
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
چکیده انگلیسی
This paper attempts to discuss the realization of monochromatic filter using silicon monoxide-silicon (SiO-Si) grating structure having defect at 18th and 52nd position. Here both absorption and reflection losses are considered to compute reflectance and transmittance. Simulation is made using plane wave expansion method. Simulation result showed that suitable combination of thickness of odd and even layers of above grating structure plays an important role to obtain reflectance and transmittance. It is also revealed that silicon monoxide-silicon grating structure with defect (air) at 18th and 52nd position behaves as monochromatic filter for thickness of even layer, 80 nm and thickness of odd layer varies from 40 nm to 190 nm. Apart from this, it is also observed that for some combination of thickness (t1,t2) grating layers, such as (50 nm, 80 nm), (60 nm, 80 nm), (70 nm, 80 nm), (80 nm, 80 nm), (90 nm, 80 nm) (110 nm, 80 nm), (120 nm, 80 nm), (130 nm, 80 nm) grating allows single wavelength only, which can be considered as ideal monochromatic filter. Again simulation studies showed that width of the reflected band gradually increases with the increase of grating length.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - Volume 127, Issue 20, October 2016, Pages 8264-8268
نویسندگان
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