کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10428525 909209 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electric field induced transitional magnetic coupling in (Ga, Cr)N/GaN magnetic tunnel junctions
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
Electric field induced transitional magnetic coupling in (Ga, Cr)N/GaN magnetic tunnel junctions
چکیده انگلیسی
Diluted magnetic semiconductor (DMS) composed in magnetic tunnel junctions (MTJs) are predicted to have potential applications in spintronics. However, the crucial issue is how to control the magnetic order of DMSs. In our semiconductor MTJs (SMTJs) model, formed of (Ga,Cr)N/GaN/(Ga,Cr)N multilayers, we found that the electrons can transfer from one (Ga,Cr)N electrode to another upon the external electric field, hence the magnetic interaction between two doped Cr ions in each (Ga,Cr)N DMS electrode can be changed from ferromagnetic to antiferromagnetic. The phenomenon proposes a possible way for the application of SMTJs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - Volume 127, Issue 20, October 2016, Pages 8951-8955
نویسندگان
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