Investigation of gamma-radiation on electronic and optical properties in carbon δ-doping GaAs/AlGaAs HEMTs structures

We report on an experimental investigation of gamma radiation effects on the electronic and optical properties in carbon delta-doping GaAs/AlGaAs High Electron Mobility Transistors (HEMT) structures. Photoluminescence measurements are used to determine the electron-hole relaxation processes in the GaAs channel. For global information on the carriers dynamics in the structures examined, we studied their interactions with the crystal lattice, thermal activation states defects, the energy level activation. Gamma radiation has changed the electronic and optical properties in GaAs/AlGaAs structures, especially the carriers thermal activation.