Activation energy study of intrinsic microcrystalline silicon thin film prepared by VHF-PECVD

Intrinsic microcrystalline silicon thin film were prepared by VHF-PECVD, the activation energy of thin film were measured by activation energy testing equipment. The activation energy of samples with different crystalline volume fraction and prepared at different power and different pressure were studied. The results showed that: the activation energy of samples deposited at amorphous/microcrystalline transition zone decrease as crystalline volume fraction increasing. With increasing of depositing power and pressure, the depositing rate were increased, the activation energy were also increased, the oxygen contaminate could be suppressed by increasing depositing rate by increasing depositing power and pressure.