کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10428565 | 909219 | 2016 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Activation energy study of intrinsic microcrystalline silicon thin film prepared by VHF-PECVD
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Intrinsic microcrystalline silicon thin film were prepared by VHF-PECVD, the activation energy of thin film were measured by activation energy testing equipment. The activation energy of samples with different crystalline volume fraction and prepared at different power and different pressure were studied. The results showed that: the activation energy of samples deposited at amorphous/microcrystalline transition zone decrease as crystalline volume fraction increasing. With increasing of depositing power and pressure, the depositing rate were increased, the activation energy were also increased, the oxygen contaminate could be suppressed by increasing depositing rate by increasing depositing power and pressure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 127, Issue 18, September 2016, Pages 7312-7318
Journal: Optik - International Journal for Light and Electron Optics - Volume 127, Issue 18, September 2016, Pages 7312-7318
نویسندگان
Chen Qingdong, Wang Junping, Zhang Yuxiang, Lu Jingxiao,