Optimization of high performance of ZnS/MgF2 ultraviolet light-emitting diodes

We have theoretically investigated the optimized one dimensional photonic crystal structure for the ultraviolet light emitting diodes with the transfer matrix method. The photonic crystals structure is composed of ZnS and MgF2. The position and the number of defect modes are shown to exhibit relationships with the structural parameters. In order to obtain ultraviolet light with high transmittance, optimized structural parameters of the multiple quantum well (MQW) structure are immediately introduced, which leads to the degraded performance of 376.5 nm ultraviolet light. Based on the above results, the calculation provides a guide for the design ultraviolet light-emitters with high performance.