کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10565910 | 972133 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS2 thin film transistor
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report a novel platform on which we design a flexible high-performance complementary metal-oxide-semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS2) NMOS on a flexible substrate. The initial implementation of a hybrid complementary inverter, comprised of 2D MoS2 NMOS and polymer PMOS on a flexible substrate, demonstrates a compelling new pathway to practical logic gates for digital circuits, achieving extremely low power consumption with low sub-1Â nA leakage currents, high performance with a voltage gain of 35 at 12Â V supply voltage, and high noise margin (larger than 3Â V at 12Â V supply voltage) with low processing costs. These results suggest that inkjet-printed organic thin film transistors and 2D multilayer semiconducting transistors may form the basis for potential future high performance and large area flexible integrated circuitry applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 15, Issue 11, November 2014, Pages 3038-3042
Journal: Organic Electronics - Volume 15, Issue 11, November 2014, Pages 3038-3042
نویسندگان
Jong Won Chung, Yeong Hwan Ko, Young Ki Hong, Wongeon Song, Chulseung Jung, Hoyoung Tang, Jiyoul Lee, Min hyung Lee, Bang-lin Lee, Jeong-il Park, Yongwan Jin, Sangyoon Lee, Jae su Yu, Jongsun Park, Sunkook Kim,