Achieving time-of-flight mobilities for amorphous organic semiconductors in a thin film transistor configuration

► Charge transport in five amorphous organic hole transporters are examined by thin film transistor (TFT) technique. ► The mobilities extracted from TFT grown on SiO2 differ greatly from those obtained from time-of-flight (TOF) experiments. ► By using a non-polar polymeric dielectric layer, TOF mobilities are found to be achievable in a TFT.