Role of ultrathin Al2O3 layer in organic/inorganic hybrid gate dielectrics for flexibility improvement of InGaZnO thin film transistors

Role of ultrathin Al2O3 layer in organic/inorganic hybrid gate dielectrics for flexibility improvement of InGaZnO thin film transistors

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 15, Issue 7, July 2014, Pages 1458-1464

Byeong-Ung Hwang, Do-Il Kim, Sung-Won Cho, Myeong-Gu Yun, Hak Jun Kim, Youn Jea Kim, Hyung-Koun Cho, Nae-Eung Lee,