Structural changes in vapour-assembled n-octylphosphonic acid monolayer with post-deposition annealing: Correlation with bias-induced transistor instability

Structural changes in vapour-assembled n-octylphosphonic acid monolayer with post-deposition annealing: Correlation with bias-induced transistor instability

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 14, Issue 11, November 2013, Pages 3000-3006

H. Gleskova, S. Gupta, P. Å utta,