Role of tunneling layer in graphene-oxide based organic nonvolatile memory transistors

► Graphene oxide (GO) as charge storage nodes in pentacene based nonvolatile memory transistors. ► Role of charge tunneling layers e.g. polymethylmethacrylate (PMMA) and polyvinylphenol (PVP). ► PMMA performed better than PVP better as charge tunneling layer. ► Electron trapping in GO is responsible for creating the memory effect.