Characterization of solution processed, p-doped films using hole-only devices and organic field-effect transistors

► A solution-processed approach for a p-doped hole transport layer in blue OLEDs is described. ► A novel dopant 2-(3-(adamantan-1-yl)propyl)-3,5,6-trifluorotetracyanoquinodimethane is used. ► Single carrier devices and field-effect transistors were utilized as test vehicles to study the charge transport properties. ► OLEDs with doped hole transport layers showed up to 30% improvement in power efficiency.