Leakage current reduction in pentacene-based thin film transistor using asymmetric source/drain electrodes

► We propose the concept of asymmetric S/D in OTFTs to reduce their off-currents. ► The artificial h-BH at D prevents hole carriers transport from S to D at off-state. ► On-current is not affected by the artificially h-BH because of BH lowering effect. ► In the asymmetric S/D devices, off-currents are decreased by 12-18.3 times.