Tuning on threshold voltage of organic field-effect transistor with a copper oxide layer

► OFET based on pentacene with CuO embeded layer is reported. ► Formation of CT complexes lead to the improving performance of the device. ► Electrons are trapped in CuO act as a floating gate voltage which influences the VTH. ► The VTH of CuO-embeded OFET depended on the trapped electron population in CuO. ► Systematic tuning on VTH of CuO-embeded OFET is achieved by adjusting positive VGS0. ► Trapped electrons are hard to release, VTH are stable under constant-voltage bias-stress.