کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10566946 | 972375 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors](/preview/png/10566946.png)
چکیده انگلیسی
⺠We demonstrate the use of n-type N,Nâ²-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) bottom contact organic field-effect transistors that employ photopatternable highly conductive poly(3,4-ethylenedioxythiophene):tosylate (PEDOT:Tos) source/drain electrodes characterized by a very low work function (4.3 eV). ⺠Because PEDOT:Tos has a very low work function, the electron injection barrier between PTCDI-C13 and PEDOT:Tos was 0.25 eV lower than that between PTCDI-C13 and gold, leading to a reduced contact resistance in the transistor. ⺠The transistor based on PEDOT:Tos showed electron mobility of 0.145 cm2/Vs, which was 16 times higher than that in transistors based on gold (0.009 cm2/Vs).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 12, Issue 3, March 2011, Pages 516-519
Journal: Organic Electronics - Volume 12, Issue 3, March 2011, Pages 516-519
نویسندگان
Kipyo Hong, Se Hyun Kim, Chanwoo Yang, Tae Kyu An, Hyojung Cha, Chanjun Park, Chan Eon Park,