کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10618828 | 988188 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Organic field-effect transistors with ultrathin modified gate insulator
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this communication, we demonstrate high capacitance, low-voltage organic field-effect transistors (OFETs) built on extremely cheap, flexible, commercially available aluminized Mylar® films covered by ultrathin (â¼3.5Â nm) SiO2 layers, which were modified via application of n-octadecytrichlorosilane (OTS) self-assembled monolayer. The modified SiO2 was tested as gate insulator in OFETs using pentacene and regioregular poly(3-hexylthiophene) (rr-P3HT) as active materials. The characteristics of the fabricated devices display low threshold (<â1Â V) assuring normally “off” transistor operation, very low inverse subthreshold slopes (pentacene: 255Â mV/dec, rr-P3HT: 375Â mV/dec), good carrier mobility (pentacene: 0.12Â cm2/(VÂ s), rr-P3HT: 0.01Â cm2/(VÂ s)) and a very small hysteresis. The performance of the presented OFETs is high enough for many commercial applications significantly reducing costs of their production.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 151, Issue 2, 14 June 2005, Pages 175-179
Journal: Synthetic Metals - Volume 151, Issue 2, 14 June 2005, Pages 175-179
نویسندگان
L.A. Majewski, M. Grell,