Surface-treatment effects on organic thin-film transistors

From the electrical measurements, typical I-V characteristics of TFTs were observed. The field effect mobility, μ, was calculated to be 0.29 cm2 V−1 s−1 for OTS-treated sample, while those of the HMDS, O2-plasma treated, and wet-cleaned samples to be 0.16, 0.1, and 0.04 cm2 V−1 s−1, respectively.