The densification, microstructure, and electrical properties of aluminum-doped zinc oxide sputtering target for transparent conductive oxide film

The results showed that after sintering at 1100 °C in air, the 2 wt% Al2O3 additive in ZnO results in retarded densification, the formation of ZnAl2O4 phase, and inferior electrical properties. However, after sintering at 1200 °C or higher temperatures, the Al2O3 additive leads to finer grain size, higher sintered density, and better electrical properties. In general, the AZO targets are also found to exhibit higher Hall mobility and lower carrier density than the AZO films do.