کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10629705 | 991139 | 2012 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Cutting hardness was adopted as a quantifier of the machinability of the polytypes of single crystal SiC. 3C-SiC offered highest cutting resistance (â¼2.9 times that of silicon) followed by the 4H-SiC (â¼2.8 times that of silicon) whereas 6H-SiC (â¼2.1 times that of silicon) showed the least. Despite its high cutting resistance, 4H-SiC showed the minimum sub-surface crystal lattice deformed layer depth, in contrast to 6H-SiC. Further analysis of temperatures in the cutting zone and the percentage tool wear indicated that single point diamond turning (SPDT) of single crystal SiC could be limited to either 6H-SiC or 4H-SiC depending upon quality and cost considerations as these were found to be more responsive and amenable to SPDT compared to single crystal 3C-SiC.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 32, Issue 12, September 2012, Pages 3423-3434
Journal: Journal of the European Ceramic Society - Volume 32, Issue 12, September 2012, Pages 3423-3434
نویسندگان
Xichun Luo, Saurav Goel, Robert L. Reuben,