Effect of vacuum annealing on charge transport and trapping in a-Si1 − xCx:H/c-Si heterostructures

► The processes of charge transport in amorphous Si1-xCx:H films have been evaluated. ► Annealing at 450 °C improves the rectifying properties. ► Annealing at 650  °C leads to hydrogen effusion from the a-Si1-xCx:H film. ► An energy band diagram of the a-Si1-xCx:H/p-Si structure is proposed.