Films thickness effect on structural and optoelectronic properties of hydrogenated amorphous germanium (a-Ge:H)

► Thin films of a-Ge:H deposited at high growth rate by rf glow discharge. ► Effect of CH and the hydrogen-bonding configuration on the structural and on the optoelectronic properties. ► When the film thicknesses d increase, the ND and the R decrease gradually. ► The remarkable improvement is attributed to the increase of H incorporated as the strongly Ge-H bonds.