Electrical properties of AsxSe1−x (x ≤ 0.05) Mott-barriers

► We measured I-V, C-V characteristics of as grown Au/a-As alloyed Se/Zr structures. ► The I-V characteristics at low to moderate fields follow the SCLC theory. ► We report an effective hole mobility of ~ 5 × 10− 7 cm2/V-sec at 295 K. ► The current at high fields is characterized by the Poole-Frenkel mechanism.