Preparation and characterization of p-type hydrogenated amorphous silicon oxide film and its application to solar cell

► We investigated various p-type a-SiO:H materials for solar cell application. ► High optical gap & activation energy, low conductivity are related to each other. ► Improved band gap matching at p/i interface achieved with p-a-SiO:H. ► Observed solar cell characteristics Jsc 16.3 mA/cm2, FF 72%, efficiency 9.4%.