کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10631275 | 991635 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of hydrogen peroxide on hydrofluoric acid etching of high-k materials: ESR investigations
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Oxides and silicates of zirconium and hafnium are being actively considered for use as gate dielectrics in MOS devices. Because of their higher dielectric constant (k â¼Â 16-22), they permit the use of thicker layers without sacrificing the capacitance value. Wet chemical etching is the method of choice for patterning these oxides. The etching process has to be selective to zirconium/hafnium oxides over silicon dioxide, which may be present in other areas. In this paper, work done on HF etching of ZrO2 and HfO2 in presence of hydrogen peroxide is presented and discussed. It was found that addition of hydrogen peroxide to HF solutions lower the etch rate of ZrO2 and HfO2 films. Electron spin resonance (ESR) spectroscopy was used to probe the reasons for the decrease in etch rates in this solution.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 351, Issue 18, 15 June 2005, Pages 1559-1564
Journal: Journal of Non-Crystalline Solids - Volume 351, Issue 18, 15 June 2005, Pages 1559-1564
نویسندگان
V. Lowalekar, S. Raghavan,