کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10633657 993050 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer
چکیده انگلیسی
The growth and photoluminescence of Ge(Si) self-assembled islands on strained Si1−xGex layers (0 < x < 20%) has been investigated. Both island size and density increase when the Ge content in the predeposited Si1−xGex alloy increases. The increased island density is associated with an enhanced surface roughness after SiGe deposition. The increased island size is attributed to enhanced Si intermixing and to a wetting layer thickness reduction. The latter is caused by accumulation of elastic strain energy in the SiGe layer. The increase in both island size and density leads to a strong interaction between neighboring islands. The island-island interaction results in island self-ordering, which is analyzed using a surface autocorrelation function. The lower Ge content in the islands accounts for the observed blueshift of the island related photoluminescence signal. We observe a room temperature photoluminescence signal for Ge islands grown on a predeposited SiGe alloy which is higher than for Ge islands grown on Si(0 0 1). This result is explained by an increased island density, which provides an efficient way to capture charge carriers in the islands.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 818-821
نویسندگان
, , , , , , , , ,