کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10633658 | 993050 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
UHV-CVD growth and annealing of thin fully relaxed Ge films on (0Â 0Â 1)Si
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
The structural effects of single and cyclic thermal annealings on relaxed Ge epilayers on Si(0 0 1) are investigated. The structural morphology of the films is studied ex situ by Rutherford back scattering spectrometry in channelling geometry (RBS-C), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The effects on optical properties are demonstrated by optical transmission spectroscopy. Thermal cycles between 750 and 870 °C were found to be efficient for reducing the threading dislocations density. But, in return for it, thermal cycles result in a strong interdiffusion and a high disorder at the Ge/Si interface, as shown through a Ïmin value of 14.4%. On the contrary, a single annealing at 720 °C decreases the density of dislocations but does not induce any new disorder. Moreover, the single annealing does not alter the near-IR optical absorption of the Ge layer.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 822-826
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 822-826
نویسندگان
M. Halbwax, M. Rouviere, Y. Zheng, D. Debarre, Lam H. Nguyen, J-L. Cercus, C. Clerc, V. Yam, S. Laval, E. Cassan, D. Bouchier,