کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10633664 993050 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optical cavities for Si/SiGe tetrahertz quantum cascade emitters
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Optical cavities for Si/SiGe tetrahertz quantum cascade emitters
چکیده انگلیسی
The use of buried tungsten silicide layers for confinement of terahertz optical modes is described. Silicon-on-silicide substrates are prepared using a bond and etch-back technique, and the successful growth of extremely long (600 period) strain-balanced p-Si/SiGe quantum cascade heterostructures on these substrates is demonstrated. THz electroluminescence is observed from these structures at low temperature, when the structure is biased so as to obtain interwell ('diagonal') transitions between heavy and light hole subbands. The emission shows a strong polarisation dependence, indicating the efficacy of the silicide layer in confining long wavelength TM modes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 851-854
نویسندگان
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