کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10633677 | 993050 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of Er concentration on the emission properties of Er-doped Si-rich silica films obtained by reactive magnetron co-sputtering
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Er-doped silicon-rich silicon oxide (SRSO) thin films have been fabricated by reactive magnetron sputtering of a pure silica target topped by chips of Er2O3. The incorporation of silicon excess in the films is due to the introduction of hydrogen in the plasma which reduces accordingly the oxygen released by the silica target. The incorporated Er content [Er] in the films was controlled by the sputtered surface ratio of Er2O3 chips with respect to that of silica target. The photoluminescence (PL) intensity at 1.54 μm from samples obtained with different [Er] values and annealing temperature were compared for the same amount of Si excess and interpreted in terms of sensitizing action of Si nanoclusters (Si-NCs) towards the neighboring Er ions. Some onset of concentration-related effects (up conversion, quenching) was suspected for [Er] â¼3 Ã 1020 cmâ3 through the decrease of the lifetime emission from â¼6 ms for [Er] = 5 Ã 1019 cmâ3 to about 3.5 ms. These effects were compensated by a better coupling rate between the Si-NCs and the neighbouring Er ions. This was achieved through some adjustments of the processing parameters: the decrease of the plasma pressure that led to the improvement of the PL by a factor of 3, and the decrease of the annealing temperature from 1100 °C to 900 °C that induced a 2.5 times increase of the 1.54 μm emission.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 915-919
Journal: Optical Materials - Volume 27, Issue 5, February 2005, Pages 915-919
نویسندگان
M. Carrada, F. Gourbilleau, C. Dufour, M. Levalois, R. Rizk,